As technology advances, the third generation semiconductor power devices have now gone into a stage of commercial application from the laboratory stage, enjoying great potential for future applications. The test of these new devices requires higher voltage and power levels and faster switching time.
Test Cycle:
Determined in accordance with standards, test conditions and quantity of measured samples
Product Scope:
Discrete devices such as MOSFET, IGBT, DIODE, BJT and third generation semiconductor devices, and the power modules composed of the above elements
Test Items:
| Static Parameter |
Symbol |
| Drain to Source Breakdown Voltage |
BVDSS |
| Drain Leakage Current |
IDSS |
| Gate Leakage Current |
IGSS |
| Gate Threshold Voltage |
VGS(th) |
| Drain to Source On Resistance |
RDS(on) |
| Drain to Source On Voltage |
VDS(on) |
| Body Diode Forward Voltage |
VSD |
| Internal Gate Resistance |
Rg |
| Input capacitance |
Cies |
| Output capacitance |
Coes |
| Reverse transfer capacitance |
Cres |
| Transconductance |
gfs |
| Gate to Source Plateau Voltage |
Vgs(pl) |
| Dynamic Parameter |
Symbol |
| Turn-on delay time |
td(on) |
| Rise time |
tr |
| Turn-off delay time |
td(off) |
| Fall time |
tf |
| Turn-on energy |
Eon |
| Turn-off energy |
Eoff |
| Diode reverse recovery time |
trr |
| Diode reverse recovery charge |
Qrr |
| Diode peak reverse recovery current |
Irrm |
| Diode peak rate of fall of reverse |
dirr/dt |
| recovery current |
| Total gate charge |
QG |
| Gate-Emitter charge |
QGC |
| Gate-Collector charge |
QGE |
| Other Parameters |
Symbol |
| thermal resistance |
Rth |
| Unclamped Inductive Switching |
UIS |
| Reverse biased safe operating area |
RBSOA |
| Short circuit safe operation area |
SCSOA |
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